产品分类：场效应管MOSFET晶体管(600V以下),规格：MSL -,
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 75V, 82A TO-220AB
(EN)
INFINEON
晶体管, MOSFET, N沟道, 24 A, 200 V, 100 mohm, 10 V, 5.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 33 A, 100 V, 52 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 210 A, 55 V, 0.0026 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 32 A, 560 V, 110 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 75 A, 55 V, 5.8 mohm, 10 V, 2 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 100V, 150A, TO-220-3
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 31 A, 200 V, 0.06 ohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 65 A, 200 V, 25 mohm, 10 V, 5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7 A, 55 V, 35 mohm, 5 V, 2.5 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 53 A, -60 V, 19.5 mohm, -10 V, -1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 24 A, 30 V, 0.04 ohm, 10 V, 1 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET, N沟道, 150 A, 100 V, 0.0023 ohm, 10 V, 2.5 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 12 A, -200 V, 500 mohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 mA, 240 V, 7.7 ohm, 10 V, 1.4 V
(EN)
TOSHIBA
晶体管, MOSFET, N沟道, 18 A, 500 V, 230 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 24 V, 0.0012 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 83 A, 150 V, 0.012 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 100 V, 0.0039 ohm, 10 V, 4 V
(EN)INFINEON
MOSFET, N-CH, 75V, 59A, TO-220AB-3
(EN)
INFINEON
晶体管, MOSFET, N沟道, 161 A, 30 V, 3.3 mohm, 10 V, 2.3 V
(EN)
STMICROELECTRONICS
场效应管, MOSFET
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 60V, 75A TO-220AB
INFINEON
晶体管, MOSFET, N沟道, 62 A, 150 V, 0.0093 ohm, 20 V, 5 V
(EN)INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 车用, 75V, 75A, TO-220AB
(EN)
