产品分类：场效应管MOSFET晶体管(600V以下),规格：MSL -,
INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 1.8 mohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -12 A, -200 V, 500 mohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 170 A, 75 V, 0.0035 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 74 A, -55 V, 20 mohm, -10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 46 A, 250 V, 0.038 ohm, 10 V, 5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.7 A, 60 V, 200 mohm, 5 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.00097 ohm, 10 V, 3.9 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 40 V, 2 mohm, 10 V, 2.3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 95 A, 60 V, 0.0049 ohm, 10 V, 3.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 89 A, 75 V, 9.4 mohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, HiPerFET, N沟道, 180 A, 100 V, 8 mohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率MOSFET, N沟道 60V 30A
(EN)
VISHAY
晶体管, MOSFET, 沟槽式FET, N沟道, 2.6 A, 200 V, 1.08 ohm, 4.5 V, 1.4 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 120 A, 200 V, 17 mohm, 10 V, 4 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 150W, TO-262
(EN)INFINEON
晶体管, MOSFET, N沟道, 130 A, 40 V, 6.5 mohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0037 ohm, 20 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 172 A, 60 V, 0.00275 ohm, 10 V, 3.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 80 A, 55 V, 0.0056 ohm, 10 V, 1.6 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 180 A, 100 V, 0.0025 ohm, 15 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 160 A, 40 V, 0.0035 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 24 A, 500 V, 0.16 ohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 21 A, 500 V, 190 mohm, 10 V, 3 V
(EN)
TOSHIBA
晶体管, MOSFET, N沟道, 15 A, 500 V, 330 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 400 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
(EN)
