产品分类：场效应管MOSFET晶体管(600V以下),规格：MSL -,
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 58 A, 200 V, 40 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 100 V, 15 mohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 120 A, 150 V, 16 mohm, 10 V, 5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 3 A, 400 V, 1.47 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 10 A, 60 V, 60 mohm, 10 V, 3 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -10 A, -20 V, 0.018 ohm, -4.5 V, -1 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 94 A, 300 V, 0.036 ohm, 10 V, 5 V
(EN)
MICROCHIP
晶体管, MOSFET, N沟道, 175 mA, 300 V, 12 ohm, 0 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 47 A, 500 V, 78 mohm, 10 V, 5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 13 A, -100 V, 200 mohm, -10 V, -4 V
(EN)
VISHAY
晶体管, MOSFET, 沟槽式FET, N沟道, 3 A, 150 V, 0.068 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 110 A, 60 V, 0.0042 ohm, 10 V, 3.7 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3 A, 20 V, 0.045 ohm, 4.5 V, 1.8 V
(EN)
VISHAY
晶体管, MOSFET, 沟槽式FET, P沟道, -50 A, -40 V, 0.012 ohm, -10 V, -1 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 60V, 0.0033Ω, 100A, TO-220-3
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 202A, TO-220AB
(EN)
VISHAY
场效应管, MOSFET
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 5.4 A, 400 V, 1 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 35 A, 100 V, 45 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 30 V, 2.8 mohm, 10 V, 1 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 60V, 195A, TO-247AC-3
(EN)INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 85A TO-220AB
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 120 V, 0.0035 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, 通用, N沟道, 75 A, 55 V, 7 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, 沟槽式FET, N沟道, 6 A, 60 V, 0.046 ohm, 10 V, 3 V
(EN)
