产品分类：场效应管MOSFET晶体管(600V以下),规格：MSL -,
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 90 A, 40 V, 3.3 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -74 A, -55 V, 0.02 ohm, -10 V, -2 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 10 A, 20 V, 0.008 ohm, 4.5 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 25 A, 250 V, 0.051 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, 通用, N沟道, 49 A, 55 V, 20 mohm, 10 V, 4 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -3 A, -12 V, 0.044 ohm, -4.5 V, -1 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 500V, 10.5A, TO220AB-3
(EN)
TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -4.7 A, -20 V, 0.031 ohm, -4.5 V, -400 mV
(EN)
NTE ELECTRONICS
场效应管, MOSFET, N沟道, 200V, 18A, TO-220
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 62 A, 33 V, 12.5 mohm, 10 V, 4 V
(EN)
MULTICOMP
场效应管, MOSFET, P沟道, -50V, 1.2Ω, -130mA, SOT-23-3
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 11.5 A, -200 V, 360 mohm, -10 V, -5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 55 V, 8 mohm, 10 V, 3 V
(EN)
MICROCHIP
晶体管, MOSFET, N沟道, 500 mA, 350 V, 17 ohm, 0 V
ROHM
晶体管, MOSFET, N沟道, 12 A, 30 V, 0.0066 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16 A, 500 V, 380 mohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 260 A, 30 V, 0.0016 ohm, 10 V, 1.9 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -2 A, -45 V, 0.13 ohm, -10 V, -3 V
(EN)
SEMELAB
晶体管, MOSFET, P沟道, 16 A, -160 V, 750 mohm, -1.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 38 A, 300 V, 0.07 ohm, 10 V, 5 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 1.75 A, -200 V, 3 ohm, -10 V, -4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 78 A, 150 V, 12 mohm, 10 V, 5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 50 mA, -40 V, 180 ohm, -20 V, -2.5 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 100V, 100A, TO-220-3
(EN)
