产品分类：场效应管MOSFET晶体管(600V以下),规格：MSL -,
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 150 A, 300 V, 0.019 ohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 90 A, 200 V, 23 mohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 88 A, 300 V, 40 mohm, 10 V, 5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 40 V, 0.0054 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 90 A, 40 V, 0.0027 ohm, 10 V, 1 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 100V, 150A, TO-220-3
(EN)INFINEON
晶体管, MOSFET, N沟道, 25 A, 200 V, 60 mohm, 10 V, 3 V
(EN)INFINEON
MOSFET, N-CH, 75V, 183A, TO-220AB-3
(EN)INFINEON
晶体管, MOSFET, N沟道, 130 A, 30 V, 0.0019 ohm, 10 V, 1.7 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 10 A, 500 V, 520 mohm, 10 V, 3.75 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 105 A, 30 V, 6 mohm, 10 V, 2.25 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道
(EN)
VISHAY
晶体管, MOSFET, N沟道, 9 A, 200 V, 0.4 ohm, 5 V, 2 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, LINEAR L2?, N沟道, 40 A, 500 V, 170 mohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 240 A, 40 V, 0.001 ohm, 10 V, 3.9 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 5.2 A, 200 V, 0.8 ohm, 5 V, 2 V
(EN)
SEMELAB
晶体管, MOSFET, N沟道, 16 A, 160 V, 750 mohm, 1.5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 16 A, 500 V, 400 mohm, 10 V, 5.5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 60 A, 55 V, 5 mohm, 10 V, 3 V
(EN)TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 80V, 150A, TO-220-3
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7.5 A, 200 V, 150 mohm, 10 V, 3 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 36 A, 500 V, 120 mohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 75 A, 100 V, 14 mohm, 10 V, 5.5 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 60V, 75A, TO-220AB-3
(EN)
INFINEON
晶体管, MOSFET, N沟道, 1.5 A, 100 V, 540 mohm, 5 V
(EN)
