产品分类：场效应管MOSFET晶体管(600V以下),规格：MSL -,
INFINEON
晶体管, MOSFET, 汽车, N沟道, 200 A, 40 V, 3.1 mohm, 10 V, 2.7 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 20 A, 500 V, 0.3 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 48 A, 60 V, 25 mohm, 10 V, 2.9 V
(EN)
SOLID STATE
晶体管, MOSFET, MOSPOWER, N沟道, 900 mA, 90 V, 3 ohm, 10 V, 1.5 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET, N沟道, 150 A, 80 V, 0.0026 ohm, 10 V, 2.6 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, HiPerFET, N沟道, 55 A, 500 V, 80 mohm, 10 V, 4.5 V
(EN)
NTE ELECTRONICS
芯片, MOSFET增强型高速开关, 125W, 18A
(EN)
MULTICOMP
场效应管, MOSFET, N沟道, 50V, 1.4Ω, 200mA, SOT-23-3
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 20 A, 500 V, 230 mohm, 10 V, 5 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 100V, 180A, TO-220AB
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.6 A, 500 V, 850 mohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 210 A, 300 V, 0.0145 ohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 140 A, 200 V, 18 mohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 6.5 A, -200 V, 800 mohm, -10 V, -4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -200V, 6.5A, TO-204AA
(EN)
NTE ELECTRONICS
场效应管, MOSFET
(EN)INFINEON
晶体管, MOSFET, N沟道, 46 A, 300 V, 49 mohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 130 A, 300 V, 22 mohm, 10 V, 4 V
(EN)
NTE ELECTRONICS
芯片, 高速开关, MOSFET, N沟道, 20A, TO220-3
(EN)MULTICOMP
场效应管, MOSFET, N沟道, 60V, 1.2Ω, 115mA, SOT-23
(EN)VISHAY
场效应管, MOSFET, N通道, 20V, 0.045Ω, 2.6A
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.6 A, 20 V, 0.045 ohm, 4.5 V, 850 mV
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, P Channel, 50 A, -30 V, 25 mohm, 5 V, -1.5 V
(EN)INFINEON
场效应管, MOSFET, N沟道, 500V, 12A, TO-204AA
(EN)
VISHAY
晶体管, MOSFET, 沟槽式FET, P沟道, -10 A, -20 V, 0.007 ohm, -4.5 V, -800 mV
(EN)
