产品分类：场效应管MOSFET晶体管(600V以下),规格：MSL MSL 1 -无限制,
VISHAY
晶体管, MOSFET, N沟道, 11.7 A, 30 V, 0.0062 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 49 A, 25 V, 0.00095 ohm, 10 V, 1.6 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 5.6 A, -8 V, 42 mohm, -4.5 V, -1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 5.1 A, 55 V, 0.0462 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -2.7 A, -12 V, 0.07 ohm, -1.8 V, -450 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 960 mA, 200 V, 1.5 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 190 A, 100 V, 0.0032 ohm, 10 V, 1 V
(EN)
RENESAS
晶体管, MOSFET, N沟道, 25 A, 100 V, 11 mohm, 10 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 25 A, 55 V, 0.03 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 65 A, 30 V, 0.0063 ohm, 10 V, 1.9 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 31 A, 100 V, 0.034 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -10.5 A, -30 V, 0.0063 ohm, -10 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -9.9 A, -50 V, 0.2 ohm, -10 V, -4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 16 A, 8 V, 0.019 ohm, 4.5 V, 350 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 60 V, 0.0035 ohm, 10 V, 4 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0038 ohm, 8 V, 850 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 14 A, 30 V, 0.0063 ohm, 10 V, 1.6 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 20 V, 0.0015 ohm, 10 V, 2.3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 89 A, 80 V, 0.0073 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, 沟槽式, P沟道, -5.2 A, -20 V, 0.03 ohm, -4.5 V, -680 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 2.6 A, 500 V, 2.7 ohm, 13 V, 3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 10.8 A, 30 V, 0.0092 ohm, 10 V, 1.9 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 16.4 A, 30 V, 0.0046 mohm, 10 V, 2.1 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 69 A, 30 V, 0.0032 ohm, 10 V, 2.1 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 300 A, 40 V, 0.00076 ohm, 10 V, 3.5 V
(EN)
