产品分类：场效应管MOSFET晶体管(600V以下),规格：MSL MSL 1 -无限制,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 240 A, 80 V, 0.0016 ohm, 10 V, 2.9 V
(EN)
INFINEON
MOSFET, N-CH, 75V, 197A, TO-263CB-7
(EN)
INFINEON
晶体管, MOSFET, N沟道, 195 A, 60 V, 0.002 ohm, 10 V, 4 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 124 A, 40 V, 0.0028 ohm, 10 V, 1.8 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 33 A, 40 V, 0.0178 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 270 A, 80 V, 0.0013 ohm, 10 V, 2.9 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 55 V, 6.5 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 80 V, 0.0055 ohm, 10 V, 2.8 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 117 A, 30 V, 0.0022 ohm, 10 V, 1.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 8.7 A, 100 V, 0.15 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 15 A, 30 V, 0.009 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 70 A, 25 V, 0.00326 ohm, 10 V, 1.73 V
(EN)
NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 61 A, 25 V, 0.00584 ohm, 10 V, 1.76 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 2.5 A, 30 V, 0.066 ohm, 4.5 V, 1.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 22 A, 500 V, 0.185 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 100 A, 25 V, 0.00153 ohm, 10 V, 1.8 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -6.5 A, -200 V, 0.8 ohm, -10 V, -2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -16.3 A, -100 V, 0.115 ohm, -10 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 13 A, -150 V, 290 mohm, -10 V, -4 V
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0021 ohm, 10 V, 2.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 69 A, 100 V, 0.0099 ohm, 10 V, 1.84 V
(EN)NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 100 A, 25 V, 0.00182 ohm, 10 V, 1.68 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -2.2 A, -12 V, 0.044 ohm, -4.5 V, -600 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 162 A, 40 V, 0.0035 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 75 V, 0.0033 ohm, 10 V, 2 V
(EN)
