产品分类：场效应管MOSFET晶体管(600V以下),规格：MSL MSL 1 -无限制,
INFINEON
晶体管, MOSFET, N沟道, 50 A, 30 V, 0.0054 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -9.8 A, -30 V, 13.6 mohm, -10 V, -1.9 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 50 A, 40 V, 0.0028 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 83 A, 100 V, 0.005 ohm, 10 V, 2.7 V
VISHAY
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0064 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 23 A, 550 V, 0.13 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 60 V, 3 mohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 5.4 A, 30 V, 49.6 mohm, 10 V, 1.5 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -2.5 A, -30 V, 0.08 ohm, -10 V, -2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 mA, 240 V, 20 ohm, 10 V, -1.4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 17 A, 550 V, 0.18 ohm, 10 V, 3 V
ROHM
晶体管, MOSFET, P沟道, -3.5 A, -20 V, 0.05 ohm, -4.5 V, -2 V
(EN)ROHM
晶体管, MOSFET, N沟道, 5 A, 20 V, 0.022 ohm, 4.5 V, 1.5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 30 V, 2950 μohm, 10 V, 1.7 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 8.5 A, 500 V, 0.4 ohm, 10 V, 3 V
(EN)ROHM
晶体管, MOSFET, N沟道, 3.5 A, 30 V, 0.044 ohm, 10 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 27 A, 55 V, 45 mohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 44 A, 55 V, 16 mohm, 10 V, 2.3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 42 A, 55 V, 0.0058 ohm, 10 V, 2 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -4 A, -12 V, 0.022 ohm, -4.5 V, -1 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -2.5 A, -12 V, 0.044 ohm, -4.5 V, -1 V
(EN)ROHM
晶体管, MOSFET, N沟道, 45 A, 200 V, 0.042 ohm, 10 V, 5 V
(EN)ROHM
晶体管, MOSFET, N沟道, 51 A, 250 V, 0.048 ohm, 10 V, 5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 51 A, 250 V, 0.048 ohm, 10 V, 5 V
(EN)ROHM
晶体管, MOSFET, N沟道, 70 A, 200 V, 0.0305 ohm, 10 V, 5 V
(EN)
