产品分类：场效应管MOSFET晶体管(600V以下),规格：MSL MSL 1 -无限制,
INFINEON
晶体管, MOSFET, N沟道, 17 A, 200 V, 165 mohm, 10 V, 5.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 7.8 A, 20 V, 0.023 ohm, 4.5 V, 600 mV
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 8.5 A, 250 V, 140 mohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 9 A, 150 V, 54 mohm, 10 V, 4 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0013 ohm, 4.5 V, 1.5 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -31 A, -55 V, 65 mohm, -10 V, -4 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 12 A, 500 V, 0.5 ohm, 10 V, 5.5 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 97 A, 25 V, 0.0039 ohm, 4.5 V, 1.1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.017 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 77 A, 40 V, 0.0062 ohm, 10 V, 3 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, Q3-Class, N沟道, 80 A, 500 V, 0.065 ohm, 10 V, 6.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 170 A, 75 V, 0.0033 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 40 V, 0.0014 ohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 56 A, 75 V, 0.00734 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 84 A, 30 V, 0.0053 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 5.9 A, 20 V, 31 mohm, 4.5 V, 1.8 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.9 A, 30 V, 0.029 ohm, 10 V, 20 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 94 A, 55 V, 7.5 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 24 A, 30 V, 0.0048 ohm, 10 V, 2.2 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 97 A, 25 V, 3.9 mohm, 8 V, 1.1 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, 60 A, -20 V, 0.0088 ohm, -4.5 V, 850 mV
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 5.4 A, 30 V, 35 mohm, 10 V, 1.5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 22 A, 250 V, 55 mohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 49 A, 30 V, 0.0006 ohm, 10 V, 1.9 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 75 V, 3.8 mohm, 10 V, 4 V
(EN)
