产品分类：场效应管MOSFET晶体管(600V以下),规格：MSL MSL 1 -无限制,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -40 A, -30 V, 0.014 ohm, -10 V, -1.8 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -35 A, -20 V, 0.0031 ohm, -10 V, -400 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 75 A, 40 V, 0.0035 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0019 ohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET™, N沟道, 100 A, 60 V, 0.0057 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4.3 A, 60 V, 55 mohm, 10 V, 2.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -5.9 A, -30 V, 50 mohm, -10 V, -2.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12.5 A, 30 V, 9.5 mohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 590 mA, 30 V, 0.55 ohm, 4.5 V, 700 mV
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -4.3 A, -20 V, 0.058 ohm, -4.5 V, -750 mV
(EN)NEXPERIA
晶体管, MOSFET, P沟道, -230 mA, -50 V, 4.5 ohm, -10 V, -1.6 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -1.1 A, -60 V, 400 mohm, -10 V, -3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 1.2 A, 20 V, 0.27 ohm, 4.5 V, 700 mV
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 1.2 A, 20 V, 0.27 ohm, 4.5 V, 700 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 560 mA, 30 V, 1.5 ohm, 4 V, 1.4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, AEC-Q101, N沟道, 915 mA, 20 V, 0.127 ohm, 4.5 V, 760 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -60 A, -20 V, 0.00125 ohm, -10 V, -1.4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 74 A, 25 V, 0.0028 ohm, 10 V, 1.6 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 330 mA, 60 V, 1.25 ohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1.4 A, 30 V, 0.11 ohm, 10 V, 600 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.4 A, -20 V, 52 mohm, -4.5 V, -800 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 18 A, 200 V, 0.15 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 100 V, 0.0053 ohm, 10 V, 2.7 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 7 A, 30 V, 0.017 ohm, 10 V, 1.4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 1 A, 25 V, 0.249 ohm, 4.5 V, 1.5 V
(EN)
