产品分类：场效应管MOSFET晶体管(600V以下),规格：MSL MSL 1 -无限制,
VISHAY
晶体管, MOSFET, N沟道, 16 A, 30 V, 0.0073 ohm, 10 V, 2.2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -50 A, -20 V, 0.0035 ohm, -4.5 V, 900 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -60 A, -40 V, 0.0058 ohm, -10 V, -2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 60 V, 0.004 ohm, 10 V, 3 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 4 A, -30 V, 70 mohm, 10 V, -800 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 50 A, 100 V, 0.0126 ohm, 10 V, 2.8 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 13 A, 200 V, 0.118 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -35 A, -20 V, 0.0035 ohm, -10 V, -400 mV
(EN)
VISHAY
MOSFET Transistor, P Channel, -60 A, -30 V, 0.0021 ohm, -10 V, -2.3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.0021 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -620 mA, -60 V, 0.62 ohm, -10 V, -1.5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 40 V, 3.2 mohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7 A, 500 V, 0.53 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.7 A, 100 V, 0.0854 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -46 A, -40 V, 0.0083 ohm, -10 V, -2.3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -50 A, -30 V, 0.0042 ohm, -10 V, -2.5 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00085 ohm, 10 V, 1.41 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16 A, 100 V, 0.0437 ohm, 10 V, 2.9 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 V, 2.2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -20 A, -20 V, 0.0199 ohm, -4.5 V, -850 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, -430 mA, -250 V, 3 ohm, -10 V, -1.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.00165 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -3.6 A, -20 V, 0.048 ohm, -4.5 V, -650 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0022 ohm, 10 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 600 mA, 20 V, 0.41 ohm, 4.5 V, 900 mV
(EN)
