产品分类：场效应管MOSFET晶体管(600V以下),规格：MSL MSL 1 -无限制,
INFINEON
晶体管, MOSFET, P沟道, -20 A, -30 V, 3.9 mohm, -10 V, -1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0091 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 11.3 A, 200 V, 0.108 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 4.2 A, 20 V, 0.035 ohm, 4.5 V, 1.2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2 A, 20 V, 0.093 ohm, 4.5 V, 1.3 V
(EN)TOSHIBA
晶体管, MOSFET, P沟道, -18 A, -30 V, 0.0026 ohm, -10 V, -800 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 200 mA, 20 V, 5 ohm, 4.5 V, 700 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 40 V, 0.0027 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 200 mA, 50 V, 3.5 ohm, 5 V, 1.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 5.5 A, 30 V, 0.023 ohm, 10 V, 1.4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 30 V, 0.0042 ohm, 10 V, 2.2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 60 V, 0.0085 ohm, 10 V, 2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 10.9 A, 250 V, 0.146 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0018 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 25 V, 0.0015 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 30 V, 0.0024 ohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 80 V, 0.0062 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -1 A, -100 V, 820 mohm, -10 V, -4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 40 V, 0.002 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 30 V, 0.00122 ohm, 10 V, 1.8 V
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -4.6 A, -30 V, 0.07 ohm, -10 V, -1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 44 A, 120 V, 0.0166 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0026 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 300 mA, 250 V, 2.8 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -2.4 A, -30 V, 0.1 ohm, -10 V, -1.5 V
(EN)
