产品分类：场效应管MOSFET晶体管(600V以下),规格：MSL MSL 1 -无限制,
DIODES INC.
晶体管, MOSFET, N沟道, 450 mA, 60 V, 2 ohm, 10 V, 2.4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 47 A, -60 V, 26 mohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 16 A, 20 V, 0.0047 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, 小信号, P沟道, -25 A, -30 V, 0.056 ohm, -5 V, -1.6 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -39.6 A, -30 V, 0.0135 ohm, -10 V, -2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 55 A, 80 V, 0.012 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 100 V, 0.0062 ohm, 10 V, 3.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 5.8 A, -20 V, 0.026 ohm, -4.5 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -5 A, -30 V, 0.033 ohm, -10 V, -2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0022 ohm, 10 V, 1.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 10 A, 40 V, 13 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 6.5 A, 20 V, 0.03 ohm, 4.5 V, 1.2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 350 mA, 60 V, 2.2 ohm, 10 V, 1.6 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 9.6 A, 60 V, 0.009 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -13 A, -150 V, 295 mohm, -10 V, -4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 250 mA, 300 V, 6 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 320 mA, 60 V, 1 ohm, 10 V, 1.1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 150 A, 40 V, 0.0026 ohm, 10 V, 2.25 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0009 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0029 ohm, 10 V, 2.4 V
(EN)
PANASONIC ELECTRONIC COMPONENTS
晶体管, MOSFET, N沟道, 100 mA, 30 V, 2 ohm, 4 V, 1 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.2 A, 60 V, 0.107 ohm, 10 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 20 A, 20 V, 4.4 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 27 A, 20 V, 0.0019 ohm, 4.5 V, 1.1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 4.2 mohm, 10 V, 1 V
(EN)
