产品分类：场效应管MOSFET晶体管(600V以下),规格：MSL MSL 1 -无限制,
NEXPERIA
晶体管, MOSFET, 带沟, N沟道, 400 mA, 30 V, 1 ohm, 4.5 V, 900 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, -15 A, -30 V, 5.9 mohm, -10 V, -1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.4 A, 30 V, 250 mohm, 10 V, 2.1 V
(EN)NEXPERIA
晶体管, MOSFET, P沟道, -5.3 A, -20 V, 0.03 ohm, -4.5 V, -700 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 9.4 A, 40 V, 0.0117 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 160 A, 75 V, 0.0018 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 6.2 A, -40 V, 41 mohm, -10 V, -3 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -200 mA, -250 V, 10 ohm, -10 V, -2.8 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.2 A, 30 V, 65 mohm, 4.5 V, 700 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 40 V, 0.0019 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -11.8 A, -12 V, 0.015 ohm, -4.5 V, -680 mV
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -2.7 A, -20 V, 100 mohm, -4.5 V, -890 mV
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 5.6 A, 60 V, 0.068 ohm, 10 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 60 V, 2730 μohm, 5 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 75 V, 0.0051 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 340 mA, 60 V, 1.19 ohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 55 A, 30 V, 0.0062 ohm, 10 V, 2.35 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 15 A, 150 V, 77 mohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -110 A, -80 V, 0.0093 ohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 2.2 A, 60 V, 0.107 ohm, 10 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 11 A, 30 V, 0.0093 ohm, 10 V, 1.8 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -5 A, -20 V, 0.034 ohm, -4.5 V, -700 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, -780 mA, -20 V, 0.6 ohm, -4.5 V, -1.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 6.3 A, 80 V, 0.024 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 100 V, 0.024 ohm, 10 V, 1.2 V
(EN)
