产品分类：场效应管MOSFET晶体管(600V以下),规格：MSL MSL 1 -无限制,
INFINEON
晶体管, MOSFET, P沟道, -360 mA, -100 V, 1.3 ohm, -10 V, -1.5 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -3.7 A, -20 V, 0.05 ohm, -4.5 V, -600 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 1.5 A, 30 V, 0.185 ohm, 8 V, 850 mV
(EN)
NEXPERIA
晶体管, MOSFET, 沟槽式, N沟道, 6.9 A, 20 V, 0.015 ohm, 4.5 V, 650 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 8.7 A, 20 V, 0.022 ohm, 4.5 V, 700 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -4.5 A, -30 V, 0.056 ohm, -4.5 V, -1.3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 20 V, 0.00125 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, P Channel, -3 A, -20 V, 0.031 ohm, -4.5 V, -650 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, Trench, AEC-Q101, N沟道, 30 A, 40 V, 0.0056 ohm, 10 V, 2 V
(EN)NEXPERIA
晶体管, MOSFET, 沟槽式, N沟道, 4.8 A, 20 V, 0.028 ohm, 4.5 V, 650 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 5 A, 100 V, 0.028 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 53 A, 30 V, 0.0067 ohm, 10 V, 2.2 V
(EN)
ROHM
晶体管, MOSFET, AEC-Q101, N沟道, 200 mA, 60 V, 1.7 ohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 19 A, 500 V, 0.16 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3.2 A, 20 V, 0.07 ohm, 4.5 V, 1.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.00465 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 100 V, 0.0085 ohm, 10 V, 2.8 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 40 V, 0.005 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -15 A, -20 V, 0.0082 ohm, -4.5 V, -1.2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, 肖特基二极管, P沟道, -3.2 A, -20 V, 0.064 ohm, -4.5 V, -1.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 300 A, 60 V, 0.00066 ohm, 10 V, 2.8 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 30 A, 80 V, 0.0155 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 18.2 A, 30 V, 0.0078 ohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 47 A, 30 V, 0.0094 ohm, 4.5 V, 1.3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 3.8 A, -200 V, 0.86 ohm, -10 V, -4 V
(EN)
