产品分类：场效应管MOSFET晶体管(600V以下),规格：MSL MSL 1 -无限制,
INFINEON
晶体管, MOSFET, N沟道, 90 A, 60 V, 0.0037 ohm, 10 V, 1.7 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道+肖特基, 3 A, 20 V, 0.08 ohm, 4.5 V, -600 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 82 A, 60 V, 0.0056 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -15.5 A, -60 V, 0.143 ohm, -5 V, -1.5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 4.7 A, 20 V, 0.024 ohm, 4.5 V, 700 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2 A, -30 V, 0.115 ohm, -10 V, -2.6 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 1.9 A, 100 V, 250 mohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 89 A, 60 V, 4.95 mohm, 10 V, 3 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 3.5 A, -30 V, 59 mohm, -10 V, -600 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 10 A, 150 V, 0.0255 ohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 15 A, 200 V, 78 mohm, 10 V, 5 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0039 ohm, 8 V, 1.3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 18 A, 150 V, 0.07 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 50 A, 60 V, 6.8 mohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -35 A, -30 V, 0.0088 ohm, -4.5 V, -1 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 4 A, 60 V, 0.07 ohm, 10 V, 2.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 55 A, 40 V, 0.0059 ohm, 10 V, 1.8 V
(EN)
ROHM
晶体管, MOSFET, AEC-Q101, N沟道, 5 A, 60 V, 0.034 ohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 370 mA, 500 V, 3 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 90 A, -100 V, 0.0156 ohm, -10 V, -3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 7.7 A, 60 V, 200 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -3.6 A, -30 V, 0.063 ohm, -10 V, -1.9 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -15 A, -100 V, 0.14 ohm, -10 V, -1.5 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 31 A, -55 V, 60 mohm, -10 V, -4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 30 V, 0.0026 ohm, 10 V, 2.5 V
(EN)
