产品分类：场效应管MOSFET晶体管(600V以下),规格：MSL MSL 1 -无限制,
TOSHIBA
晶体管, MOSFET, 功率, N沟道, 3 A, 500 V, 2.3 ohm, 10 V, 2.4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, P沟道, -24 A, -30 V, 28 mohm, -10 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 80 V, 0.013 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 55 V, 27 mohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 28 A, 20 V, 0.0023 ohm, 4.5 V, 800 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 5.7 A, 20 V, 16.8 mohm, 4.5 V, 830 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.8 A, 60 V, 0.12 ohm, 10 V, 1.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 200 A, 60 V, 0.0017 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 13 A, 30 V, 7.4 mohm, 10 V, 1.7 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 160 mA, 50 V, 3.1 ohm, 4 V, 800 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 13 A, 30 V, 0.011 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 7.5 A, 150 V, 0.0173 ohm, 10 V, 2.7 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 44 A, 30 V, 0.0056 ohm, 10 V, 1.6 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -9 A, -20 V, 0.085 ohm, -1.8 V, -400 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 10.5 A, 500 V, 0.33 ohm, 10 V, 4 V
(EN)
DIODES INC.
晶体管, MOSFET, 低电压, N沟道, 2.2 A, 20 V, 120 mohm, 4.5 V, 700 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, -30 A, -60 V, 0.069 ohm, -10 V, -3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 150 V, 0.0184 ohm, 10 V, 2.9 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 124 A, 30 V, 0.0034 ohm, 11.5 V, 2.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 3.1 A, 400 V, 1.8 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 900 mA, 20 V, 220 mohm, 4.5 V, 1 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 6.4 A, -40 V, 60 mohm, 10 V, -1 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 70 A, 24 V, 0.0037 ohm, 10 V, 1.45 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0024 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 42 A, 75 V, 0.0218 ohm, 10 V, 4 V
(EN)
