产品分类：场效应管MOSFET晶体管(600V以下),规格：MSL MSL 1 -无限制,
VISHAY
晶体管, MOSFET, P沟道, -8.9 A, -150 V, 0.262 ohm, -10 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 41 A, 30 V, 0.0065 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 101 A, 40 V, 0.0036 ohm, 10 V, 3.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 11.3 A, 100 V, 0.068 ohm, 10 V, 1.6 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -4.3 A, -20 V, 0.025 ohm, -10 V, -1.4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 13 A, 30 V, 10 mohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 1.2 A, 250 V, 1.8 ohm, 10 V, 3.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 90 A, 30 V, 0.0018 ohm, 10 V, 1.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 20 A, 30 V, 0.0085 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 3.2 A, -20 V, 0.07 ohm, -4.5 V, -720 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 13.1 A, 100 V, 0.049 ohm, 10 V, 3.2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15.6 A, 100 V, 0.078 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 40 V, 3 mohm, 10 V, 1.2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 89 A, 40 V, 0.0041 ohm, 10 V, 1.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 13 A, 200 V, 0.235 ohm, 10 V, 5.5 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 41 A, 30 V, 0.0069 ohm, 10 V, 1.8 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -90 A, -30 V, 0.0036 ohm, -10 V, -3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 5.1 A, -60 V, 500 mohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 160 A, 75 V, 0.0018 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 12 A, 100 V, 0.08 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 2 A, -12 V, 0.084 ohm, -4.5 V, -700 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, 64 A, -55 V, 20 mohm, -10 V, -4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16 A, 50 V, 47 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 13 A, 550 V, 0.18 ohm, 10 V, 4 V
(EN)
TOSHIBA
晶体管, MOSFET, 功率, P沟道, -16 A, -30 V, 0.0039 ohm, -10 V, -800 mV
(EN)
