产品分类：场效应管MOSFET晶体管(600V以下),规格：MSL MSL 1 -无限制,
INFINEON
晶体管, MOSFET, N沟道, 16 A, 55 V, 0.075 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 17 A, 60 V, 0.037 ohm, 10 V, 1.7 V
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 1 A, 20 V, 0.3 ohm, 4.5 V, 500 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 3 A, 250 V, 0.097 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 3.1 A, -100 V, 1.2 ohm, -10 V, -4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3 A, 60 V, 0.088 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 40 A, 40 V, 0.00484 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 80 V, 3.9 mohm, 10 V, 2.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 65 A, 30 V, 0.0075 ohm, 10 V, 1 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 2.2 A, 60 V, 0.054 ohm, 10 V, 1.75 V
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -5.4 A, -30 V, 0.045 ohm, -10 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1.7 A, 60 V, 200 mohm, 5 V, 2 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -36 A, -30 V, 0.0027 ohm, -10 V, -2.5 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0019 ohm, 4.5 V, 1.1 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 19 A, 60 V, 0.0038 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 69 A, 30 V, 0.0032 ohm, 10 V, 2.1 V
(EN)NEXPERIA
晶体管, MOSFET, P沟道, -1 A, -30 V, 250 mohm, -10 V, -2.8 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -12 A, -20 V, 0.015 ohm, -4.5 V, -1.2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.9 A, 20 V, 33 mohm, 4.5 V, 950 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 10 A, 100 V, 0.142 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 49 A, 40 V, 0.002 ohm, 10 V, 1.9 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3.1 A, 100 V, 0.102 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 31.8 A, 30 V, 0.0205 ohm, 4.5 V, 1.62 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -1.5 A, -20 V, 0.092 ohm, -4.5 V, -1 V
(EN)
MICROCHIP
晶体管, MOSFET, N沟道, 100 mA, 450 V, 60 ohm, 0 V
(EN)
