产品分类：场效应管MOSFET晶体管(600V以下),规格：MSL MSL 1 -无限制,
VISHAY
晶体管, MOSFET, N沟道, 19.3 A, 30 V, 0.007 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 1.8 A, 100 V, 0.153 ohm, 10 V, 1.4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0023 ohm, 10 V, 3 V
(EN)
RENESAS
晶体管, MOSFET, N沟道, 3.1 A, 60 V, 0.082 ohm, 10 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 20 A, 60 V, 0.048 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 30 A, 100 V, 0.0245 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -18.6 A, -20 V, 0.006 ohm, -10 V, -600 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 25 A, 200 V, 0.12 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 17 A, 55 V, 0.075 ohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 11.1 A, 100 V, 0.017 ohm, 10 V, 1.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 9.5 A, 30 V, 13 mohm, 10 V, 1 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.028 ohm, 10 V, 1.7 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 21 A, 60 V, 0.042 ohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 12.5 A, 80 V, 13.5 mohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -1.9 A, -200 V, 3 ohm, -10 V, -4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 11 A, 500 V, 520 mohm, 10 V, 4 V
(EN)RENESAS
晶体管, MOSFET, N沟道, 40 A, 60 V, 4.5 mohm, 10 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -19.7 A, -30 V, 8.1 mohm, -10 V, -1.2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 30 V, 5.1 mohm, 10 V, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -9.7 A, -60 V, 0.2 ohm, -10 V, -1.5 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -950 mA, -20 V, 150 mohm, -4.5 V, -1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 49 V, 0.0058 ohm, 10 V, 1.6 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 110 A, 100 V, 10.5 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 50 A, 100 V, 0.0131 ohm, 10 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0024 ohm, 10 V, 3 V
(EN)
