产品分类：场效应管MOSFET晶体管(600V以下),规格：MSL MSL 1 -无限制,
DIODES INC.
晶体管, MOSFET, N沟道, 1.1 A, 60 V, 450 mohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -28 A, -100 V, 0.057 ohm, -10 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 100 V, 0.036 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.5 A, 60 V, 100 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 18.6 A, -40 V, 0.0075 ohm, 20 V, -3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 600 mA, 450 V, 3.2 ohm, 10 V, 3.75 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 362 A, 40 V, 0.0007 ohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 14 A, 100 V, 0.049 ohm, 10 V, 3.2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 89 A, 55 V, 0.01 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 51 A, 100 V, 12.7 mohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 5 A, 500 V, 1.14 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2.4 A, -60 V, 0.2 ohm, -10 V, -2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 49 A, 55 V, 0.0175 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 1 A, 100 V, 700 mohm, 10 V, 3 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 230 mA, -100 V, 8 ohm, -10 V, -3.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 85 A, 150 V, 0.012 ohm, 10 V, 5 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 500 mA, 240 V, 6 ohm, 10 V, 1.3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 6.5 A, 30 V, 38 mohm, 10 V, 1.7 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 200 mA, -240 V, 15 ohm, -10 V, -1.4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 17 A, 100 V, 0.1 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -28 A, -100 V, 0.033 ohm, -10 V, -3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 85 A, 55 V, 0.011 ohm, 10 V, 4 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0034 ohm, 10 V, 1.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 48 A, 60 V, 0.023 ohm, 10 V, 4 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 87 A, 30 V, 6.4 mohm, 8 V, 1.2 V
(EN)
