产品分类：场效应管MOSFET晶体管(600V以下),规格：MSL MSL 1 -无限制,
VISHAY
晶体管, MOSFET, N沟道, 12 A, 30 V, 0.0158 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 53 A, 30 V, 6.7 mohm, 10 V, 1 V
(EN)
MICROCHIP
晶体管, MOSFET, N沟道, 360 mA, 250 V, 6 ohm, 0 V
INFINEON
晶体管, MOSFET, N沟道, 180 A, 100 V, 0.0029 ohm, 10 V, 2.7 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 4.6 A, 30 V, 50 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 55 A, 30 V, 10.5 mohm, 10 V, 1.4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 83 A, 150 V, 0.0091 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 28 A, 300 V, 108 mohm, 10 V, 5 V
(EN)
TOSHIBA
晶体管, MOSFET, 功率, N沟道, 15 A, 60 V, 0.0139 ohm, 10 V, 1.3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 40 V, 5400 μohm, 10 V, 1.2 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 90 mA, -60 V, 14 ohm, -10 V, -3.5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -3 A, -150 V, 0.073 ohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 75 V, 0.0051 ohm, 10 V, 1.6 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 12.9 A, 60 V, 0.034 ohm, 10 V, 1.7 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0072 ohm, 10 V, 1.2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0039 ohm, 10 V, 2.7 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -3 A, -8 V, 0.0162 ohm, -4.5 V, -800 mV
(EN)
PANASONIC ELECTRONIC COMPONENTS
晶体管, MOSFET, N沟道, 100 mA, 60 V, 6 ohm, 4 V, 1.2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 70 A, 30 V, 0.002 ohm, 10 V, 1.7 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -110 A, -60 V, 0.0055 ohm, -10 V, -3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 56 A, 30 V, 9.5 mohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 26 A, 30 V, 0.0013 ohm, 10 V, 1.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 80 A, 30 V, 4.2 mohm, 10 V, 1 V
(EN)
DIODES INC.
晶体管, MOSFET, 低电压, N沟道, 4.6 A, 30 V, 47 mohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0026 ohm, 10 V, 3 V
(EN)
