产品分类：场效应管MOSFET晶体管(600V以下),规格：MSL MSL 1 -无限制,
NEXPERIA
晶体管, MOSFET, N沟道, 90 A, 80 V, 0.0075 ohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.00049 ohm, 10 V, 1.5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 350 mA, 60 V, 2.2 ohm, 10 V, 1.6 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 6 A, 20 V, 0.024 ohm, 4.5 V, 600 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 40 V, 8.5 mohm, 20 V, 1.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 43 A, 100 V, 0.0112 ohm, 10 V, 2.9 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 150 mA, 60 V, 5 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 17 A, 30 V, 7.8 mohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 97 A, 100 V, 0.0072 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 9 A, 500 V, 0.65 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 97 A, 100 V, 0.0072 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 78.5 A, 200 V, 0.0127 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 19 A, 100 V, 68 mohm, 10 V, 2.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.2 A, 60 V, 0.047 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 52 A, 49 V, 0.0058 ohm, 10 V, 1.6 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 60 V, 3460 μohm, 5 V, 1.7 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -250 mA, -30 V, 0.9 ohm, -10 V, -2.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 14 A, 500 V, 0.32 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 86 A, 30 V, 6.5 mohm, 10 V, 1.8 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 20 A, 500 V, 0.2 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0024 ohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.002 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 14 A, -100 V, 200 mohm, -10 V, -4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 90 A, 200 V, 0.0138 ohm, 10 V, 4 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 40 V, 790 ohm, 10 V, 1.7 V
(EN)
