产品分类：场效应管MOSFET晶体管(600V以下),规格：MSL MSL 1 -无限制,
INFINEON
晶体管, MOSFET, N沟道, 29 A, 55 V, 40 mohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, 沟槽式, N沟道, 4.5 A, 30 V, 0.033 ohm, 4.5 V, 650 mV
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 700 mA, 60 V, 2 ohm, 10 V, 2.4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 13 A, 550 V, 0.22 ohm, 10 V, 3 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 100 mA, 100 V, 10 ohm, 10 V, 2.4 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 480 mA, -240 V, 11 ohm, -10 V, -1.4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 23 A, 30 V, 0.045 ohm, 10 V, 1 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 2.8 A, 20 V, 0.052 ohm, 4.5 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -3.5 A, -20 V, 130 mohm, -4.5 V, -600 mV
(EN)
ROHM
晶体管, MOSFET, N沟道, 4.5 A, 30 V, 0.027 ohm, 10 V, 2.5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 55 V, 5 mohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 7.9 A, 20 V, 0.023 ohm, 4.5 V, 400 mV
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 180 A, 100 V, 0.0039 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 61 A, 30 V, 0.0085 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 10 A, 400 V, 0.5 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 6.3 A, 30 V, 33 mohm, 10 V, 1.2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 75 A, 40 V, 2 mohm, 10 V, 4 V
(EN)ROHM
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 0.045 ohm, -10 V, -2.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0018 ohm, 10 V, 2.5 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 12 A, -100 V, 300 mohm, -10 V, 4 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -3.5 A, -12 V, 0.066 ohm, -4.5 V, -800 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 30 A, 60 V, 0.023 ohm, 10 V, 2.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 60 A, 40 V, 0.0019 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.5 A, 20 V, 0.068 ohm, 4.5 V, 700 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 73 mohm, -10 V, -1 V
(EN)
