产品分类：场效应管MOSFET晶体管(600V以下),规格：MSL MSL 1 -无限制,
ROHM
晶体管, MOSFET, P沟道, -2 A, -20 V, 0.1 ohm, -4.5 V, -2 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -190 mA, -250 V, 7.7 ohm, -10 V, -1.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 16 A, 200 V, 0.135 ohm, 10 V, 5.25 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 385 mA, 60 V, 780 mohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 14.5 A, 30 V, 0.007 ohm, 4.5 V, 1 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -4.5 A, -45 V, 0.11 ohm, -10 V, -3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 75 A, 55 V, 0.0049 ohm, 10 V, 4 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 18 A, 30 V, 0.0129 ohm, 10 V, 2.5 V
(EN)ROHM
晶体管, MOSFET, N沟道, 10 A, 100 V, 0.095 ohm, 10 V, 2.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 2 A, 60 V, 0.12 ohm, 10 V, 2.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 1.6 A, 45 V, 0.14 ohm, 4.5 V, 1.5 V
(EN)ROHM
晶体管, MOSFET, N沟道, 200 mA, 20 V, 0.8 ohm, 2.5 V, 1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 900 mA, 30 V, 0.216 ohm, 4.5 V, 1.3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 58 A, 40 V, 13 mohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 66 A, 100 V, 0.0125 ohm, 5 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 5 A, 55 V, 60 mohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
MOSFET Transistor, N Channel, 200 A, 40 V, 0.0008 ohm, 10 V, 4.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.8 A, 500 V, 2.7 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -14.5 A, -30 V, 0.0065 ohm, -10 V, -1.9 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -15 A, -100 V, 0.085 ohm, -10 V, -2.5 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 1.4 A, 60 V, 550 mohm, 10 V, 2.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 500 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 200 A, 40 V, 0.001 ohm, 4.5 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 14 A, 30 V, 7.5 mohm, 10 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 58 A, 100 V, 0.0107 ohm, 10 V, 2.7 V
(EN)
