产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
VISHAY
场效应管, MOSFET, P沟道, -30V, -4A
(EN)
VISHAY
场效应管, MOSFET, P沟道, 8-SOIC
(EN)
MICROCHIP
芯片, 场效应管, MOSFET, 耗尽模式, 350V, 35Ω, 3-SOT-23, T/R
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0008 ohm, 10 V, 1.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -13 A, -30 V, 7.7 mohm, -10 V, -1.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, -20A, SOIC-8, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -3.5 A, -20 V, 130 mohm, -4.5 V, -600 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, -3.5A, SOIC-8, 整卷
(EN)
INFINEON
晶体管, MOSFET, N沟道, 1.9 A, 150 V, 280 mohm, 10 V, 5.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -60V, -120mA, SOT-23, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.3 A, 20 V, 0.11 ohm, 4.5 V, 700 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 60V, 4A, SOT-223, 整卷
(EN)
ROHM
晶体管, MOSFET, P沟道, -100 mA, -20 V, 2.5 ohm, -4.5 V, -1 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -12V, 4.1A TO-236, 整卷
(EN)
VISHAY
场效应管, MOSFET, P通道, -30V, 0.01Ω, -8.8A
(EN)VISHAY
场效应管, P通道, MOSFET, -30V, -8.1A, SOIC-8, 整卷
(EN)
VISHAY
场效应管, MOSFET, P沟道, -20V, -60A, POWERPAK SO-8, 整卷
(EN)
VISHAY
晶体管, MOSFET, N沟道, 6.5 A, 100 V, 0.16 ohm, 10 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -30V, 2.7A TO-236, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 25V, 0.0025OHM, 40A, POWER 33-8
(EN)
VISHAY
场效应管, MOSFET, N沟道, 30V, 50A, POWERPAK8
(EN)
NEXPERIA
场效应管, MOSFET, N沟道 通道, 30V, 850MA, 3-SOT-23, 整卷
(EN)
VISHAY
场效应管, MOSFET, N沟道, 250V, 3.8A, SOIC
(EN)
VISHAY
晶体管, P沟道
(EN)
VISHAY
场效应管, MOSFET, P沟道, -20V, -16.7A, MICRO FOOT
(EN)
