产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
INFINEON
晶体管, MOSFET, N沟道, 192 A, 30 V, 0.0013 ohm, 10 V, 1.7 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 30V, 100A, PQFN-8
(EN)
INFINEON
场效应管, MOSFET, N沟道, 25V, 30A, PQFN-8
(EN)
INFINEON
场效应管, MOSFET, N沟道, 25V, 100A, PQFN-8
(EN)INFINEON
场效应管, MOSFET, N沟道, 25V, 30A, PQFN-8
(EN)
INFINEON
场效应管, MOSFET, N沟道, 17.2A, 30V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, P沟道
(EN)
ROHM
晶体管, MOSFET, AEC-Q101, N沟道, 300 mA, 60 V, 0.7 ohm, 10 V, 2.5 V
(EN)
VISHAY
MOSFET, N CHANNEL, 40V, 50A, POWERPAK SO-8
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.5 A, -12 V, 0.054 ohm, -4.5 V, -1.4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 120V, 0.0096OHM, 35A, POWER 56-8
(EN)
INFINEON
晶体管, MOSFET, N沟道, 50 A, 30 V, 0.0025 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2 A, -12 V, 0.152 ohm, -4.5 V, -900 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1.5 A, -20 V, 0.205 ohm, -4.5 V, -1.4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 16 A, 20 V, 0.026 ohm, 4.5 V, 400 mV
(EN)
NEXPERIA
晶体管, MOSFET, 沟槽式, P沟道, -3.7 A, -20 V, 0.05 ohm, -4.5 V, -650 mV
(EN)
VISHAY
晶体管, P沟道
(EN)
INFINEON
场效应管, MOSFET, N沟道 通道, 25V, 60A, PQFN-30
(EN)
VISHAY
晶体管, P沟道
(EN)
VISHAY
晶体管, MOSFET, N沟道, 11.7 A, 30 V, 0.0062 ohm, 10 V, 1 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -4.1A, -12V, 750mW
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 49 A, 25 V, 0.00095 ohm, 10 V, 1.6 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 100A, 60V, 3.6W
(EN)
VISHAY
MOSFET, P CHANNEL, -30V, -40A, POWERPAK SO-8
(EN)
VISHAY
MOSFET, P CHANNEL, -8V, -12A, POWERPAK SC70-6
(EN)
