产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
VISHAY
晶体管, MOSFET, P沟道, 5.6 A, -8 V, 42 mohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, 6.8A, MICROFET 2X2
(EN)
INFINEON
晶体管, MOSFET, N沟道, 5.1 A, 55 V, 0.0462 ohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 30V, 3.2A, TO-236
(EN)
VISHAY
MOSFET, N CHANNEL, 30V, 0.0058OHM, 40A, POWERPAK SO-8
(EN)
VISHAY
晶体管, MOSFET, P沟道, -2.7 A, -12 V, 0.07 ohm, -1.8 V, -450 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 960 mA, 200 V, 1.5 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, 0.026Ω, 5.8A, SUPERSOT-6
(EN)
VISHAY
Transistor Polarity:P Channel
(EN)
VISHAY
MOSFET, P CHANNEL, -20V, -25A, POWERPAK-8
(EN)VISHAY
晶体管, MOSFET, N沟道, 960 mA, 200 V, 1.5 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, P沟道
(EN)
VISHAY
场效应管, MOSFET, N沟道, 10A, 30V, 2.5W
(EN)
RENESAS
晶体管, MOSFET, N沟道, 25 A, 100 V, 11 mohm, 10 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 8.3A, 100V SOIC-8
(EN)
VISHAY
N CHANNEL MOSFET, 20V, 200mA, SC-89
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 20V, 0.019OHM, 7A, MICROFET-6
(EN)
VISHAY
晶体管, MOSFET, P沟道, -10.5 A, -30 V, 0.0063 ohm, -10 V, -1 V
(EN)ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 20V, 5.1A, TSOP
INFINEON
场效应管, MOSFET, P沟道, -700mA, -150V, 8-SOIC
(EN)
VISHAY
晶体管, MOSFET, P沟道, -9.9 A, -50 V, 0.2 ohm, -10 V, -4 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 25V, 100A, 0.0009Ω, SON-8
(EN)
VISHAY
晶体管, MOSFET, N沟道, 16 A, 8 V, 0.019 ohm, 4.5 V, 350 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 60 V, 0.0035 ohm, 10 V, 4 V
(EN)
VISHAY
MOSFET, P CHANNEL, -200V, -1.9A, TO-252-3
(EN)
