产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
ON SEMICONDUCTOR
MOSFET, N CHANNEL, 30V, 0.0056OHM, 44A, SOIC-8
(EN)
INFINEON
场效应管, MOSFET, N沟道 通道, 20V, 211A, DIRECTFET
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -10.8 A, -40 V, 0.0105 ohm, -10 V, -1.7 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 4 A, -20 V, 0.0471 ohm, 4.5 V, -1.2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 30V, 6.3A, TSOP6
(EN)ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 30V, 0.0038OHM, 18A, SOIC-8
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
TEXAS INSTRUMENTS
MOSFET, N CHANNEL, 30V, 60A, 0.0051OHM, SON-8
(EN)
NEXPERIA
晶体管, MOSFET, 沟槽式, N沟道, 7.3 A, 12 V, 0.015 ohm, 4.5 V, 600 mV
(EN)VISHAY
MOSFET, P CHANNEL, -30V, 0.0127OHM, -19.2A, SOIC-8
(EN)
VISHAY
MOSFET, P CHANNEL, -12V, -8.2A, TSSOP-8
(EN)
INFINEON
晶体管, MOSFET, N沟道, 13 A, 100 V, 62 mohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 500V, 19A, TO-220FP-3
(EN)
INFINEON
晶体管, MOSFET, N沟道, 11.6 A, 560 V, 0.34 ohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 500V, 19A, TO-263-3
(EN)
VISHAY
晶体管, MOSFET, N沟道, 10.5 A, 500 V, 0.33 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 500V, 0.65OHM, 9A, TO-263-3
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 240 A, 80 V, 0.0016 ohm, 10 V, 2.9 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 124 A, 40 V, 0.0028 ohm, 10 V, 1.8 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -40V, 18.6A, SOIC
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 40V, 100A, 0.0018Ω, SON-8
(EN)
INFINEON
场效应管, MOSFET
(EN)
VISHAY
Transistor Polarity:N Channel
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 117 A, 30 V, 0.0022 ohm, 10 V, 1.5 V
(EN)
TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4 A, 20 V, 0.024 ohm, 4.5 V, 800 mV
(EN)
