产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 160 A, 30 V, 0.0011 ohm, 10 V, 1 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -10 A, -30 V, 0.009 ohm, -10 V, -2.5 V
(EN)ROHM
晶体管, MOSFET, P沟道, -14 A, -30 V, 0.005 ohm, -10 V, -2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 150V, 4.1A, SOIC
(EN)
ROHM
晶体管, MOSFET, N沟道, 35 A, 30 V, 0.0012 ohm, 10 V, 2.5 V
(EN)
INTERNATIONAL RECTIFIER
晶体管, MOSFET, N沟道, 4.5 A, 500 V, 1.5 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 12 A, 550 V, 0.27 ohm, 10 V, 3 V
(EN)ROHM
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0023 ohm, 10 V, 2.5 V
(EN)
MICROCHIP
晶体管, MOSFET, N沟道, 230 mA, 500 V, 7 ohm, 0 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 16 A, 500 V, 0.317 ohm, 10 V, 3 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 4 A, 20 V, 0.025 ohm, 4.5 V, 1.3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 4.6 A, 30 V, 0.04 ohm, 10 V, 1.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 39 A, 30 V, 0.0047 ohm, 10 V, 2.5 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -5.5 A, -30 V, 0.0193 ohm, -10 V, -2.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 12 A, 200 V, 0.25 ohm, 10 V, 5.25 V
(EN)
MICREL SEMICONDUCTOR
晶体管, MOSFET, P沟道, 2 A, -6 V, 0.07 ohm, -4.5 V, -1.2 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 200 mA, 50 V, 1.6 ohm, 4.5 V, 800 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 39 A, 30 V, 10 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 0.0132Ω, 9A, SOIC-8
(EN)ROHM
晶体管, MOSFET, P沟道, -3 A, -30 V, 0.07 ohm, -10 V, -2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 7.1 A, 550 V, 0.47 ohm, 10 V, 3 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -1.3 A, -12 V, 0.19 ohm, -4.5 V, -1 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 30V, 6.1A
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -150V, 3A, POWER 33
(EN)
MICROCHIP
MOSFET, N CHANNEL, 450V, 0.1A, TO-243AA-3
(EN)
