产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
VISHAY
晶体管, MOSFET, N沟道, 8.7 A, 500 V, 0.7 ohm, 10 V, 3 V
(EN)
MICROCHIP
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0018 ohm, 4.5 V, 1.3 V
(EN)MICROCHIP
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0022 ohm, 4.5 V, 1.3 V
(EN)MICROCHIP
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0028 ohm, 10 V, 1.3 V
(EN)MICROCHIP
晶体管, MOSFET, N沟道, 48 A, 25 V, 0.01 ohm, 4.5 V, 1.35 V
(EN)
VISHAY
晶体管, P沟道
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 11.6 A, 30 V, 0.007 ohm, 10 V, 1.5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 2.5 A, 525 V, 2.1 ohm, 10 V, 3.75 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, HEXFET, 30V, 8.2A, TSOP-6
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 8.5 A, 250 V, 140 mohm, 10 V, 3 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 100V, 14A, TO-204AA
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0013 ohm, 4.5 V, 1.5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 12 A, 500 V, 0.5 ohm, 10 V, 5.5 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 97 A, 25 V, 0.0039 ohm, 4.5 V, 1.1 V
(EN)
VISHAY
晶体管, 场效应管, MOSFET, P沟道, -12V, -10.2A, 微型FOOT-4
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, Q3-Class, N沟道, 80 A, 500 V, 0.065 ohm, 10 V, 6.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 40 V, 0.0014 ohm, 10 V, 1 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 500V, 10.5A, TO-263-3
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)VISHAY
晶体管, MOSFET, N沟道, 12 A, 500 V, 0.46 ohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -8V, 4.1A, TO-236
(EN)
VISHAY
MOSFET, P CHANNEL, -200V, 0.8OHM, -6.5A, TO-263-3
(EN)VISHAY
场效应管, MOSFET, N沟道, 3.2A, 60V, 2W
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 5.9 A, 20 V, 31 mohm, 4.5 V, 1.8 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -20V, -2.4A, SOT-23, 整卷
(EN)
