产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
VISHAY
晶体管, MOSFET, N沟道, 4.9 A, 30 V, 0.029 ohm, 10 V, 20 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 150V, 0.0439OHM, 16A,
(EN)
INFINEON
晶体管, MOSFET, N沟道, 110 A, 20 V, 6 mohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 24 A, 30 V, 0.0048 ohm, 10 V, 2.2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 97 A, 25 V, 3.9 mohm, 8 V, 1.1 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, 60 A, -20 V, 0.0088 ohm, -4.5 V, 850 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 5.4 A, 30 V, 35 mohm, 10 V, 1.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, SOT-223, SMD, 1.5A, 100V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -20V, 1A, SOT-23
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 22 A, 250 V, 55 mohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, N沟道, DMOS FET, 20V, 1.05A, 3-SOT-23, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 49 A, 30 V, 0.0006 ohm, 10 V, 1.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -200V, 0.54Ω, -7.3A, TO-263-3
(EN)
INFINEON
场效应管, MOSFET, N沟道, 25V, 40A, PQFN-8
(EN)
VISHAY
场效应管, MOSFET, P沟道, -20V, SC-89
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 4.4 A, 525 V, 1.28 ohm, 10 V, 3.75 V
(EN)FUJI ELECTRIC
晶体管, MOSFET, N沟道, 73 A, 100 V, 25 mohm, 10 V, 5 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -30V, 29A, SOIC, 整卷
(EN)
VISHAY
晶体管, MOSFET, P沟道, -35 A, -20 V, 0.0031 ohm, -10 V, -400 mV
(EN)
VISHAY
场效应管, MOSFET, P沟道, -200V, 3.8A, POWERPAK-SO, 整卷
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 60V, 500mA, SOT-23, 整卷
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, 60V, 180mA, SOT-23, 整卷
(EN)VISHAY
场效应管, MOSFET, P沟道, -40V, 18.6A, SOIC-8, 整卷
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET™, N沟道, 100 A, 60 V, 0.0057 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4.3 A, 60 V, 55 mohm, 10 V, 2.2 V
(EN)
