产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
INFINEON
N CH POWER MOSFET, HEXFET, 30V, 27A, PQF
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 590 mA, 30 V, 0.55 ohm, 4.5 V, 700 mV
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -4.3 A, -20 V, 0.058 ohm, -4.5 V, -750 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, N通道, MOSFET, 25V, 34A, 8-PWR56
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道
(EN)NEXPERIA
晶体管, MOSFET, P沟道, -230 mA, -50 V, 4.5 ohm, -10 V, -1.6 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -1.1 A, -60 V, 400 mohm, -10 V, -3 V
(EN)
VISHAY
MOSFET, N CHANNEL, 30V, 40A, POWERPAK SO-8
(EN)
VISHAY
N CHANNEL MOSFET, 20V, 60A, SOIC
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 1.2 A, 20 V, 0.27 ohm, 4.5 V, 700 mV
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 1.2 A, 20 V, 0.27 ohm, 4.5 V, 700 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 560 mA, 30 V, 1.5 ohm, 4 V, 1.4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, AEC-Q101, N沟道, 915 mA, 20 V, 0.127 ohm, 4.5 V, 760 mV
(EN)VISHAY
晶体管, MOSFET, P沟道, -6 A, -12 V, 0.023 ohm, -4.5 V, 400 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -60 A, -20 V, 0.00125 ohm, -10 V, -1.4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 74 A, 25 V, 0.0028 ohm, 10 V, 1.6 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 330 mA, 60 V, 1.25 ohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1.4 A, 30 V, 0.11 ohm, 10 V, 600 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.4 A, -20 V, 52 mohm, -4.5 V, -800 mV
(EN)VISHAY
晶体管, MOSFET, P沟道, -7.1 A, -12 V, 28.5 mohm, -4.5 V, -400 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 100 V, 0.0053 ohm, 10 V, 2.7 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 7 A, 30 V, 0.017 ohm, 10 V, 1.4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 1 A, 25 V, 0.249 ohm, 4.5 V, 1.5 V
(EN)
VISHAY
MOSFET, P CHANNEL, -12V, -4A, SOT-363-6
(EN)
VISHAY
晶体管, MOSFET, P沟道, -16.1 A, -40 V, 0.018 ohm, -4.5 V, -1.2 V
(EN)
