产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
VISHAY
晶体管, MOSFET, P沟道, -8 A, -12 V, 0.016 ohm, -4.5 V, -1 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7.5 A, 60 V, 0.017 ohm, 10 V, 1 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 150V, 7.7A, POWERPAK SC70
(EN)
VISHAY
晶体管, P沟道
(EN)
ROHM
晶体管, MOSFET, N沟道, 2 A, 30 V, 194 mohm, 4.5 V, 1.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 0.026Ω, 2.7A, SUPERSOT-3
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 1.37 A, -20 V, 120 mohm, -4.5 V, -640 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1.6 A, -30 V, 200 mohm, -10 V, -1.9 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -30V, -19.7A, SOIC-8
(EN)
DIODES INC.
晶体管, MOSFET, AEC-Q101, N沟道, 630 mA, 20 V, 0.3 ohm, 4.5 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 200 mA, 240 V, 2.2 ohm, 10 V, 1.65 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
VISHAY
场效应管, MOSFET, N沟道, D-S, 20V, 7.9A, TSOP6
(EN)
INFINEON
晶体管, MOSFET, N沟道, 55 A, 80 V, 10.3 mohm, 10 V, 2.8 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 80 V, 0.0046 ohm, 10 V, 1.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4 A, -20 V, 0.054 ohm, -4.5 V, -700 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 60 V, 0.007 ohm, 10 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -3.5 A, -60 V, 0.11 ohm, -10 V, -3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 5.2 A, 30 V, 0.034 ohm, 4.5 V, 400 mV
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 560 mA, 30 V, 1.5 ohm, 4 V, 800 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.1 A, 30 V, 0.08 ohm, 10 V, 1.7 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 530 mA, 20 V, 0.35 ohm, 4.5 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 900 mA, 30 V, 0.39 ohm, 4.5 V, 700 mV
(EN)VISHAY
晶体管, MOSFET, P沟道, -6 A, -8 V, 0.025 ohm, -4.5 V, -350 mV
(EN)VISHAY
晶体管, MOSFET, N沟道, 4.3 A, 40 V, 0.042 ohm, 10 V, 1.5 V
(EN)
