产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1.8 A, -60 V, 0.19 ohm, -10 V, -2.6 V
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, P Channel, -2.5 A, -60 V, 72 mohm, -10 V, -3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 22 A, 12 V, 0.0075 ohm, 4.5 V, 800 mV
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 10 A, 525 V, 0.41 ohm, 10 V, 3.75 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3.2 A, 200 V, 65 mohm, 10 V, 4.5 V
(EN)
DIODES INC.
晶体管, MOSFET, AEC-Q101, P沟道, -460 mA, -20 V, 0.5 ohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 7 A, 30 V, 0.0215 ohm, 10 V, 3 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 200 mA, 60 V, 1.6 ohm, 4.5 V, 1.5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -3.6 A, -60 V, 54 mohm, -10 V, -3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0023 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 98 A, 40 V, 0.0025 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0029 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 58 A, 25 V, 0.0042 ohm, 10 V, 2 V
INFINEON
晶体管, MOSFET, N沟道, 71 A, 30 V, 4.8 mohm, 10 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 340 mA, 240 V, 2.8 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 60 V, 0.0034 ohm, 10 V, 2.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0035 ohm, 10 V, 1.6 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0042 ohm, 8 V, 1.2 V
(EN)DIODES INC.
晶体管, MOSFET, 低电压, N沟道, 6.9 A, 60 V, 45 mohm, 10 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -1.8 A, -60 V, 0.5 ohm, -10 V, -2 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0025 ohm, 10 V, 1.8 V
(EN)
VISHAY
晶体管, MOSFET, 沟槽式FET, P沟道, -18 A, -40 V, 0.021 ohm, -10 V, -3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 200 V, 0.038 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0023 ohm, 10 V, 1.7 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 350 mA, 60 V, 1 ohm, 10 V, 1.75 V
(EN)
