产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
INFINEON
晶体管, MOSFET, P沟道, -620 mA, -60 V, 0.62 ohm, -10 V, -1.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 20V, 6A, 二极管, SOT23
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7 A, 500 V, 0.53 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.7 A, 100 V, 0.0854 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -46 A, -40 V, 0.0083 ohm, -10 V, -2.3 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -40V, -4.4A, SOT-23-3
(EN)VISHAY
晶体管, MOSFET, P沟道, -50 A, -30 V, 0.0042 ohm, -10 V, -2.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16 A, 100 V, 0.0437 ohm, 10 V, 2.9 V
(EN)
TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -5.3 A, -30 V, 0.038 ohm, -10 V, -1 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 V, 2.2 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -430 mA, -250 V, 3 ohm, -10 V, -1.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.00165 ohm, 10 V, 2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 150V, 1.5A, TSOP
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -3.6 A, -20 V, 0.048 ohm, -4.5 V, -650 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0022 ohm, 10 V, 1 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
VISHAY
场效应管, MOSFET, P沟道, 60V V(BR)DSS
(EN)
VISHAY
晶体管, MOSFET, N沟道, 600 mA, 20 V, 0.41 ohm, 4.5 V, 900 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 12 A, 8 V, 0.0078 ohm, 4.5 V, 350 mV
(EN)
TEXAS INSTRUMENTS
场效应管, N沟道, 大功率, NEXFET, 25V, 100A, SON-8
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 35.8 A, 30 V, 0.0011 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16.8 A, 60 V, 0.05 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 300 mA, 20 V, 1 ohm, 10 V, 1.7 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 40 A, 40 V, 0.0116 ohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.85 A, 200 V, 65 mohm, 10 V, 2 V
(EN)
