产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
INFINEON
场效应管, MOSFET, P沟道, -30V, -8A, SOIC
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.8 A, 55 V, 0.04 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 2 A, 42 V, 0.165 ohm, 10 V, 1.8 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 4.5 A, 500 V, 480 mohm, 10 V, 3.75 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 80V, 0.0026OHM, 76A, POWER 56-8
(EN)
ROHM
晶体管, MOSFET, N沟道, 5 A, 60 V, 0.078 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 17 A, 500 V, 0.23 ohm, 10 V, 3.75 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -200V, 11.5mA
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -100 A, -75 V, 0.0062 ohm, -10 V
(EN)
VISHAY
晶体管, MOSFET, 沟槽式FET, P沟道, -28 A, -80 V, 0.021 ohm, -10 V, -3 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -12 A, -60 V, 0.047 ohm, -10 V, -2.6 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET?, N沟道, 50 A, 100 V, 0.0121 ohm, 10 V, 3 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 2.5 A, 30 V, 0.05 ohm, 10 V, 2.5 V
(EN)
DIODES INC.
晶体管, MOSFET, 低电压, P沟道, 1.6 A, -30 V, 210 mohm, 10 V, -1 V
(EN)ROHM
晶体管, MOSFET, P沟道, -6 A, -20 V, 0.0161 ohm, -4.5 V, -1.2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 6 A, 42 V, 0.09 ohm, 10 V, 1.6 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.6 A, 52 V, 0.095 ohm, 10 V, 1.5 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -2.5 A, -20 V, 0.048 ohm, -4.5 V, -1 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 60 mA, 200 V, 25 ohm, 10 V, 1 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.004 ohm, 10 V, 2.6 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 48 A, 500 V, 100 mohm, 10 V, 4 V
(EN)ROHM
晶体管, MOSFET, P沟道, -3 A, -12 V, 0.03 ohm, -4.5 V, -1 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 73 A, 300 V, 45 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 4.4 A, 500 V, 1.22 ohm, 10 V, 3.75 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 2 A, 30 V, 154 mohm, 4.5 V, 1.5 V
(EN)
