产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -30V, 50A, D2-PAK
(EN)
NEXPERIA
场效应管, MOSFET, P 通道, -20V, -3.9A, 3-SOT-23
(EN)
VISHAY
场效应管, MOSFET, N沟道, 40V, 30A
(EN)
VISHAY
晶体管, MOSFET, P沟道, -50 A, -20 V, 0.0035 ohm, -4.5 V, 900 mV
(EN)
VISHAY
场效应管, MOSFET, N沟道, 60V, 115MA TO-236, 整卷
(EN)
VISHAY
场效应管, MOSFET, N沟道, 60V, 2Ω, 300mA, TO-236
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 5A, SuperSOT, 整卷
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, 2A, SuperSOT, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 5 A, 30 V, 0.043 ohm, 10 V, 1.6 V
(EN)
MICROCHIP
场效应管, MOSFET, 耗尽模式, 500V, 1KΩ, 3-SOT-89, 卷装
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 7.2A, SOT-223, 整卷
(EN)ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 30V, 560mA SOT-23, 整卷
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 30V, 4A, SOT-23, 整卷
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.3 A, 40 V, 0.042 ohm, 10 V, 1.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 5.9 A, 20 V, 0.025 ohm, 4.5 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -8 A, -30 V, 0.016 ohm, -10 V, -3 V
(EN)VISHAY
场效应管, N通道, MOSFET, 60V, 20A, POWERPAK SO
(EN)VISHAY
场效应管, MOSFET, P沟道, -35V, 35A, 整卷
(EN)
VISHAY
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.00165 ohm, 10 V, 2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 5 A, 25 V, 0.019 ohm, 8 V, 1.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -14 A, -40 V, 36 mohm, -10 V, -1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2 A, 20 V, 0.04 ohm, 4.5 V, 700 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 9 A, 40 V, 0.012 ohm, 10 V, 3 V
VISHAY
晶体管, MOSFET, N沟道, 530 mA, 20 V, 0.35 ohm, 4.5 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 6 A, -30 V, 0.025 ohm, -10 V, -3 V
(EN)
