产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
VISHAY
晶体管, MOSFET, P沟道, -60 A, -30 V, 0.0021 ohm, -10 V, -2.3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -50 A, -30 V, 0.0042 ohm, -10 V, -2.5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -18 A, -30 V, 0.0076 ohm, -10 V, -2.5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -45 A, -30 V, 0.0072 ohm, -10 V, -2.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 990 mA, 75 V, 1.3 ohm, 10 V, 1.7 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 200V, 30A, TO-204AE
(EN)INFINEON
晶体管, MOSFET, N沟道, 6 A, 100 V, 300 mohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 100V, 8A TO-205AF
(EN)INFINEON
晶体管, MOSFET, N沟道, 8 A, 100 V, 180 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 2.5 A, 500 V, 1.5 ohm, 10 V, 4 V
(EN)INTERNATIONAL RECTIFIER
晶体管, MOSFET, P沟道, 6.5 A, -100 V, 300 mohm, -10 V, -4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 200 mA, 60 V, 5 ohm, 10 V, 2.1 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 200 mA, 60 V, 5 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 180 mA, 60 V, 1.8 ohm, 10 V, 2.1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 115 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 300 mA, 60 V, 2.8 ohm, 10 V, 2 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 115 mA, 60 V, 13.5 ohm, 10 V, 2.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 115 mA, 60 V, 7.5 ohm, 10 V, 2.1 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 350 mA, 60 V, 1 ohm, 10 V, 1.6 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 450 mA, 60 V, 1 ohm, 10 V, 1.6 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 450 mA, 60 V, 1 ohm, 10 V, 1.6 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 300 mA, 60 V, 1 ohm, 10 V, 1.6 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 290 mA, 60 V, 1 ohm, 10 V, 1.6 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 290 mA, 60 V, 1 ohm, 10 V, 1.6 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 310 mA, 60 V, 1 ohm, 10 V, 1.6 V
(EN)
