产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 3 A, 60 V, 0.07 ohm, 10 V, 1.55 V
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 4.7 A, 30 V, 0.042 ohm, 10 V, 1 V
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 500 mA, 30 V, 1.5 ohm, 4 V, 400 mV
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, P沟道, -3.1 A, -30 V, 0.097 ohm, -4.5 V, -1 V
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, P沟道, -3.1 A, -40 V, 0.09 ohm, -10 V, -1 V
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 2.5 A, 20 V, 0.09 ohm, 4.5 V, 250 mV
(EN)
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 28 A, 30 V, 0.025 ohm, 10 V, 1 V
(EN)
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, P沟道, -40 A, -30 V, 0.02 ohm, -10 V, -1 V
(EN)
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, P沟道, -6 A, -30 V, 0.05 ohm, -10 V, -1 V
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 32 A, 40 V, 0.02 ohm, 10 V, 1 V
(EN)
MICROSEMI
场效应管, MOSFET, N沟道, 500V, 15A, TO-220
(EN)
INFINEON
晶体管, MOSFET, P沟道, -5.4 A, -20 V, 0.1 ohm, -2.7 V, -700 mV
(EN)INFINEON
晶体管, MOSFET, P沟道, -10 A, -30 V, 0.02 ohm, -10 V, -1 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -13 A, -100 V, 0.205 ohm, -10 V, -2 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -18 A, -55 V, 0.11 ohm, -10 V, -2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 30 mA, 12 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 200V, 250mA TO-92
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 250 mA, 200 V, 4.5 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 60V, 500mA, TO-92
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 150 mA, 60 V, 5 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 500 mA, 60 V, 5 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 0.350W, TO-92
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -90 mA, -45 V, 9 ohm, -10 V, -3.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 60 V, 0.0022 ohm, 10 V, 3 V
(EN)
