产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.5 A, -60 V, 300 mohm, -10 V, 2.6 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4 A, 60 V, 100 mohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4 A, 60 V, 100 mohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4 A, 60 V, 0.07 ohm, 10 V, 1.6 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 5 A, -30 V, 65 mohm, -10 V, 1.6 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 7.3 A, -30 V, 0.026 ohm, -10 V, 1.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 7.3 A, -30 V, 0.026 ohm, -10 V, 1.5 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 30V V(BR)DSS
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 40 A, 60 V, 0.013 ohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 20 A, 60 V, 0.026 ohm, 10 V, 1.8 V
(EN)
NTE ELECTRONICS
场效应管, MOSFET
(EN)
NTE ELECTRONICS
场效应管, MOSFET
(EN)
NTE ELECTRONICS
场效应管, MOSFET, N沟道, 500V, 4.5A TO-220
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, AEC-Q101, N沟道, 915 mA, 20 V, 0.127 ohm, 4.5 V, 760 mV
(EN)
NTE ELECTRONICS
场效应管, MOSFET, N沟道, 60V, 500mA, TO-92
(EN)
NTE ELECTRONICS
场效应管, MOSFET, N沟道, 100V, 14A, TO-220
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 5 A, -30 V, 100 mohm, 10 V, -1.75 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 3.1 A, -20 V, 0.058 ohm, -4.5 V, -950 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 5.2 A, 20 V, 25 mohm, 4.5 V, 600 mV
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 4.2 A, -20 V, 0.047 ohm, -4.5 V, -400 mV
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 4.2 A, -20 V, 0.047 ohm, -4.5 V, -400 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 7.8 A, 30 V, 0.0203 ohm, 4.5 V, 550 mV
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 7.8 A, 30 V, 0.0203 ohm, 4.5 V, 550 mV
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 7.8 A, 30 V, 0.0203 ohm, 4.5 V, 550 mV
(EN)
ON SEMICONDUCTOR
场效应管, N通道, MOSFET, 30V, 30A, DFN5
(EN)
