产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
VISHAY
晶体管, MOSFET, P沟道, -8.7 A, -40 V, 0.011 ohm, -4.5 V, -3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 11 A, 30 V, 12.5 mohm, 10 V, 1.9 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 6 A, 8 V, 0.014 ohm, 4.5 V, 800 mV
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 200 mA, 50 V, 3.5 ohm, 5 V, 1.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 12 A, 30 V, 20 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -35V, -13A
(EN)
INFINEON
晶体管, MOSFET, N沟道, 23 A, 80 V, 0.027 ohm, 10 V, 2.8 V
(EN)
VISHAY
N CHANNEL MOSFET, 150V, 3.4A, POWERPAK 1212
(EN)VISHAY
晶体管, MOSFET, P沟道, -29 A, -30 V, 3.9 mohm, -10 V, -2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 57 A, 30 V, 0.0048 ohm, 10 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0008 ohm, 10 V, 1.6 V
(EN)
TOSHIBA
晶体管, MOSFET, P沟道, -34 A, -30 V, 0.0037 ohm, -10 V, -800 mV
(EN)
NEXPERIA
晶体管, MOSFET, 沟, P沟道, -1.2 A, -20 V, 0.17 ohm, -4.5 V, -700 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 21.4 A, 60 V, 0.025 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, 沟, N沟道, 265 mA, 60 V, 2.1 ohm, 10 V, 1 V
(EN)
VISHAY
晶体管, N沟道
(EN)INFINEON
晶体管, MOSFET, N沟道, 18 A, 100 V, 0.038 ohm, 10 V, 2.7 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -9.8 A, -30 V, 0.0136 ohm, -10 V, -1.9 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 81 A, 20 V, 0.0032 ohm, 10 V, 2.45 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 300 mA, 60 V, 2 ohm, 10 V, 1.6 V
(EN)
INFINEON
场效应管, MOSFET
(EN)
VISHAY
场效应管, MOSFET, N沟道, ESD保护
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.8 A, 20 V, 0.078 ohm, 4.5 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.00205 ohm, 10 V, 1.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.7 A, 60 V, 100 mohm, 10 V, 2.4 V
(EN)
