产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
VISHAY
晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0055 ohm, 10 V, 1.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 500 mA, 60 V, 7.5 ohm, 10 V, 1.85 V
(EN)
VISHAY
MOSFET, N CHANNEL, 60V, 2.3A, SOT-23-3
(EN)
NEXPERIA
晶体管, MOSFET, D-MOS, P沟道, -210 mA, -300 V, 17 ohm, -10 V, -2.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 7.3 A, 30 V, 30 mohm, 10 V, 1 V
(EN)
MULTICOMP
场效应管, MOSFET, N沟道, 50V, 1.4Ω, 200mA, SOT-323-3
(EN)
INFINEON
晶体管, MOSFET, N沟道, 63 A, 30 V, 0.0038 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -2 A, -20 V, 0.12 ohm, -4.5 V, -700 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 5 A, 500 V, 1.7 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2 A, 400 V, 2.8 ohm, 10 V, 5 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 50 A, 40 V, 0.0053 ohm, 10 V, 1.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET , 30V, 6.3A, N通道*NIC*
(EN)
VISHAY
场效应管, MOSFET, P沟道, -30V, 4A, TO-236
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1.5 A, 400 V, 3.6 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 86 A, 60 V, 0.0055 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 1.7A
(EN)
ROHM
晶体管, MOSFET, N沟道, 250 mA, 60 V, 1.7 ohm, 10 V, 2.3 V
(EN)ROHM
晶体管, MOSFET, P沟道, -250 mA, -30 V, 0.9 ohm, -10 V, -2.5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -185 mA, -60 V, 6 ohm, -10 V, -3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -13.2 A, -100 V, 0.119 ohm, -4.5 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.7 A, 60 V, 200 mohm, 10 V, 4 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 8.3 A, 30 V, 0.0205 ohm, 10 V, 2 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -3.5 A, -60 V, 0.11 ohm, -10 V, -3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 78 A, 100 V, 0.0059 ohm, 10 V, 3.2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -6.4 A, -20 V, 0.023 ohm, 4.5 V, -1 V
(EN)
