产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 6.2 A, 20 V, 0.021 ohm, 4.5 V, 800 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 7.6 A, 40 V, 0.021 ohm, 10 V, 1.9 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 350 mA, 30 V, 1 ohm, 4.5 V, 900 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 210 mA, 55 V, 2.3 ohm, 4.5 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 10.2A, SOIC
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0055 ohm, 10 V, 1.5 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -90 A, -30 V, 0.0045 ohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 14.1 A, 30 V, 0.0036 ohm, 10 V, 2.5 V
(EN)
VISHAY
MOSFET, N CHANNEL, 20V, 5.4A, CHIPFET-8
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 48 A, 30 V, 0.007 ohm, 10 V, 1.7 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 35 A, 30 V, 1.2 mohm, 8 V, 1.1 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -5.7 A, -20 V, 0.041 ohm, -4.5 V, -1 V
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -5 A, -30 V, 0.045 ohm, -10 V, -1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 3.2 A, 12 V, 0.034 ohm, 4.5 V, 650 mV
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0013 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3 A, -12 V, 0.054 ohm, -4.5 V, -1.4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1.3 A, -20 V, 0.14 ohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
P CHANNEL MOSFET, -60V, 5.7A, POWER 33
(EN)VISHAY
晶体管, MOSFET, N沟道, 6.7 A, 150 V, 0.041 ohm, 10 V, 4.5 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -5.5 A, -30 V, 0.031 ohm, -10 V, -1.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2 A, -30 V, 0.115 ohm, -10 V, -2.6 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 3 A, 30 V, 0.054 ohm, 10 V, 1.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.5 A, 30 V, 140 mohm, 4.5 V, 1.75 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -7.5 A, -30 V, 0.018 ohm, -10 V, -2.5 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 25 V, 0.0042 ohm, 4.5 V, 1.7 V
(EN)
