产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0025 ohm, 10 V, 3 V
(EN)
INFINEON
MOSFET, N CHANNEL, 25V, 22A, PQFN-5
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0015 ohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0025 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 2.6 A, 500 V, 2.7 ohm, 13 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 180 mA, -60 V, 5 ohm, -10 V, -1.7 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 2.3 A, 30 V, 0.054 ohm, 8 V, 900 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.2 A, 20 V, 100 mohm, 4.5 V, 700 mV
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 170 A, 100 V, 10 mohm, 10 V, 4 V
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 4.2 A, 20 V, 0.019 ohm, 4.5 V, 500 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 6.2 A, 60 V, 0.018 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -3.44 A, -60 V, 0.11 ohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.4 A, 30 V, 0.092 ohm, 10 V, 2.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -8.8 A, -30 V, 0.016 ohm, -10 V, -2.1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0034 ohm, 10 V, 3 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 9.9 A, -40 V, 60 mohm, -10 V, -1 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -230 mA, -30 V, 2.8 ohm, -4.5 V, -900 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -13 A, -35 V, 9.7 mohm, -10 V, -1.6 V
(EN)
NEXPERIA
P CHANNEL, DMOS FET, -30V, -520MA, 3-SOT-23
(EN)
VISHAY
场效应管, MOSFET, P沟道
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -130 mA, -50 V, 10 ohm, -5 V, -1.6 V
(EN)VISHAY
场效应管, MOSFET, P沟道, -60V, 4.7A, SOIC
(EN)
VISHAY
晶体管, N沟道, 12A, 20V, 3.5W
(EN)
VISHAY
晶体管, MOSFET, P沟道, -9.7 A, -30 V, 0.0088 ohm, -10 V, -1.4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 300 mA, 60 V, 2 ohm, 10 V, 2.5 V
(EN)
