产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
TEXAS INSTRUMENTS
MOSFET, N CHANNEL, 30V, 100A, 950uOHM, SON-8
(EN)
INFINEON
晶体管, MOSFET, N沟道, 18 A, 30 V, 4.8 mohm, 10 V, 1.8 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 11 A, -30 V, 14 mohm, -10 V, -1.7 V
(EN)
DIODES INC.
晶体管, MOSFET, AEC-Q101, P沟道, -820 mA, -20 V, 0.5 ohm, -4.5 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -3.6 A, -60 V, 54 mohm, -10 V, -1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0034 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 11.6 A, 30 V, 0.0079 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 60V, 0.0265OHM, 6.1A,
(EN)
VISHAY
MOSFET, N CHANNEL, 30V, 14A, SOIC-8
(EN)
INFINEON
晶体管, MOSFET, N沟道, 39 A, 30 V, 10 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2.4 A, -20 V, 0.07 ohm, -4.5 V, -0.72 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 60V, 500mA, TO-92
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 4.5 A, -20 V, 0.039 ohm, 12 V, -800 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 5.2 A, 55 V, 0.045 ohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -2.2A, -150V, 8-SOIC
(EN)
VISHAY
场效应管, MOSFET晶体管
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 5.5 A, 30 V, 0.017 ohm, 10 V, 1.5 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0035 ohm, 10 V, 1.8 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 33 A, 30 V, 0.006 ohm, 10 V, 1.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 5.8 A, 100 V, 0.275 ohm, 10 V, 2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 150V, 4.8A, SOIC
(EN)INFINEON
晶体管, MOSFET, N沟道, 4.8 A, 500 V, 1.26 ohm, 13 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12 A, 100 V, 200 mohm, 5 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 100 V, 0.0195 ohm, 10 V, 1.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 90 A, 25 V, 0.0011 ohm, 10 V, 1.4 V
(EN)
