产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
INFINEON
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0012 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1.5 A, 100 V, 250 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -20 A, -30 V, 0.0107 ohm, -10 V, -1.9 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 7 A, 30 V, 30 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 20V, 238mA, SC-75
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 1.5 A, 60 V, 0.176 ohm, 10 V, 1.7 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 1.4 A, 30 V, 220 mohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 1.7 mohm, 10 V, 1 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 30 V, 2.9 mohm, 8 V, 1.1 V
(EN)
INFINEON
晶体管, MOSFET, 汽车, N沟道, 5.1 A, 55 V, 0.0462 ohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -8.7 A, -30 V, 14 mohm, -10 V, -3 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 5.47 A, 20 V, 0.021 ohm, 10 V, 950 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -8.2 A, -40 V, 0.022 ohm, -10 V, -1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16 A, 250 V, 220 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.3 A, 150 V, 0.113 ohm, 10 V, 2.5 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 2 A, 60 V, 350 mohm, 5 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.003 ohm, 10 V, 1.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -50 A, -100 V, 17.8 mohm, -10 V, -2.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 9 A, 30 V, 0.0082 ohm, 10 V, 1.2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 8.4 A, 60 V, 200 mohm, 10 V, 4 V
(EN)
RENESAS
晶体管, MOSFET, N沟道, 23 A, 100 V, 13 mohm, 10 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 36 A, 100 V, 0.019 ohm, 10 V, 3.1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.02 ohm, 10 V, 1.85 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3 A, 500 V, 2.6 ohm, 10 V, 3 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 1.6 A, -100 V, 350 mohm, -10 V, -2 V
(EN)
