产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
VISHAY
场效应管, MOSFET, P沟道, -80V, 2.2A TO-236
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 400 mA, 200 V, 1.6 ohm, 10 V, 2.8 V
(EN)
VISHAY
场效应管, MOSFET, P沟道
(EN)
NEXPERIA
场效应管, MOSFET, P 通道, -20V, -3.9A, 3-SOT-23
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 750 mA, 20 V, 0.075 ohm, 10 V, 1.7 V
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -35 mA, -200 V, 80 ohm, -10 V, -1.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -12 A, -60 V, 0.11 ohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -12 A, -20 V, 0.0067 ohm, -4.5 V, -900 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 5.9 A, 30 V, 0.022 ohm, 10 V, 1.3 V
(EN)
VISHAY
晶体管, N通道
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -2.6 A, -100 V, 0.15 ohm, -10 V, -2 V
(EN)
INFINEON
场效应管, MOSFET, P沟道, -30V, -12A, SOIC
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 1.8 A, 400 V, 3 ohm, 10 V, 3.75 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -11 A, -55 V, 0.175 ohm, -10 V, -4 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -18 A, -55 V, 110 mohm, -10 V, -4 V
(EN)
ROHM
晶体管, MOSFET, 低电压, N沟道, 9 A, 30 V, 11 mohm, 10 V, 2.5 V
(EN)ROHM
晶体管, MOSFET, AEC-Q101, P沟道, -2 A, -45 V, 0.13 ohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15 A, 30 V, 0.0054 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 30 V, 0.0017 ohm, 10 V, 1.8 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 20 V, 0.00075 ohm, 10 V, 800 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -40V, 8.4mA
(EN)INFINEON
晶体管, MOSFET, P沟道, 2.2 A, -150 V, 240 mohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 2 A, 55 V, 0.14 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -4.5 A, -20 V, 0.03 ohm, -4.5 V, -1.5 V
(EN)
