产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
INFINEON
晶体管, MOSFET, P沟道, -18 A, -55 V, 0.11 ohm, -10 V, -4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -900 mA, -8 V, 0.28 ohm, -4.5 V, -400 mV
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 35 A, 30 V, 1.4 mohm, 10 V, 1.55 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4.5 A, 60 V, 0.092 ohm, 10 V, 2.6 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -3.6 A, -200 V, 1.5 ohm, -10 V, -4 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 34 A, 100 V, 0.0121 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 450 mA, 60 V, 1 ohm, 10 V, 1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 18 A, 100 V, 0.0189 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.1 A, 500 V, 1.26 ohm, 13 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 50 A, 30 V, 0.00165 ohm, 10 V, 1.1 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 60A, 60V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, P沟道
(EN)
ROHM
晶体管, MOSFET, AEC-Q101, P沟道, -2.5 A, -20 V, 0.07 ohm, -4.5 V, -2 V
(EN)
ON SEMICONDUCTOR
N CHANNEL MOSFET, 30V, 13.1A, DFN5
(EN)
VISHAY
晶体管, MOSFET, N沟道, 10 A, 400 V, 0.5 ohm, 10 V, 5 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -3.1 A, -100 V, 1.2 ohm, -10 V, -4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 3 A, -150 V, 1.5 ohm, 10 V, 3.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 18.1 A, 500 V, 0.25 ohm, 13 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 29 A, 100 V, 0.029 ohm, 10 V, 3.8 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -5.8 A, -30 V, 0.032 ohm, -10 V, -1.3 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -4.3 A, -20 V, 0.042 ohm, -4.5 V, -1.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4.5 A, 400 V, 0.83 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.00085 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.00095 ohm, 10 V, 3.9 V
(EN)
VISHAY
MOSFET, N CHANNEL, 30V, 30A, SOIC-8
(EN)
